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DMN3025LFG-7

DMN3025LFG-7 Diodes Incorporated


DMN3025LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N CH 30V 7.5A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V
auf Bestellung 248000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.25 EUR
6000+0.24 EUR
10000+0.22 EUR
50000+0.21 EUR
Mindestbestellmenge: 2000
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Technische Details DMN3025LFG-7 Diodes Incorporated

Description: MOSFET N CH 30V 7.5A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V.

Weitere Produktangebote DMN3025LFG-7 nach Preis ab 0.25 EUR bis 0.74 EUR

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DMN3025LFG-7 DMN3025LFG-7 Hersteller : Diodes Incorporated DMN3025LFG.pdf MOSFETs 30V N-CH MOSFET
auf Bestellung 2229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.28 EUR
2000+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LFG-7 DMN3025LFG-7 Hersteller : Diodes Incorporated DMN3025LFG.pdf Description: MOSFET N CH 30V 7.5A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V
auf Bestellung 249949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
28+0.64 EUR
100+0.44 EUR
500+0.35 EUR
1000+0.28 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LFG-7 Hersteller : DIODES INCORPORATED DMN3025LFG.pdf DMN3025LFG-7 SMD N channel transistors
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