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DMN3025LFV-7

DMN3025LFV-7 Diodes Incorporated


DMN3025LFV.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 18000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.20 EUR
6000+0.19 EUR
10000+0.17 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3025LFV-7 Diodes Incorporated

Description: MOSFET N-CH 30V 25A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V.

Weitere Produktangebote DMN3025LFV-7 nach Preis ab 0.21 EUR bis 0.74 EUR

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DMN3025LFV-7 DMN3025LFV-7 Hersteller : Diodes Incorporated DMN3025LFV.pdf Description: MOSFET N-CH 30V 25A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
auf Bestellung 19000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.57 EUR
100+0.34 EUR
500+0.32 EUR
1000+0.21 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LFV-7 Hersteller : DIODES INCORPORATED DMN3025LFV.pdf DMN3025LFV-7 SMD N channel transistors
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DMN3025LFV-7 Hersteller : Diodes Incorporated DMN3025LFV.pdf MOSFET MOSFET BVDSS: 25V-30V
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