Produkte > DIODES INCORPORATED > DMN3025LSS-13
DMN3025LSS-13

DMN3025LSS-13 Diodes Incorporated

DMN3025LSS.pdf Hersteller: Diodes Incorporated
Description: MOSFET N CH 30V 7.2A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 175000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.19 EUR
5000+0.17 EUR
12500+0.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN3025LSS-13 Diodes Incorporated

Description: MOSFET N CH 30V 7.2A 8-SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V.

Weitere Produktangebote DMN3025LSS-13 nach Preis ab 0.18 EUR bis 0.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN3025LSS-13 DMN3025LSS-13 Hersteller : Diodes Incorporated DMN3025LSS.pdf MOSFET 30V N-CH MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.75 EUR
10+0.60 EUR
100+0.41 EUR
1000+0.23 EUR
2500+0.19 EUR
10000+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LSS-13 DMN3025LSS-13 Hersteller : Diodes Incorporated DMN3025LSS.pdf Description: MOSFET N CH 30V 7.2A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
auf Bestellung 177486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LSS-13 Hersteller : DIODES INCORPORATED DMN3025LSS.pdf DMN3025LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH