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DMN3026LVT-7

DMN3026LVT-7 Diodes Incorporated

DMN3026LVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3026LVT-7 Diodes Incorporated

Description: MOSFET N-CH 30V 6.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V.

Weitere Produktangebote DMN3026LVT-7 nach Preis ab 0.15 EUR bis 0.62 EUR

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DMN3026LVT-7 DMN3026LVT-7 Hersteller : Diodes Incorporated DMN3026LVT.pdf MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF
auf Bestellung 3958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.48 EUR
100+0.26 EUR
1000+0.18 EUR
3000+0.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMN3026LVT-7 DMN3026LVT-7 Hersteller : Diodes Incorporated DMN3026LVT.pdf Description: MOSFET N-CH 30V 6.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 643 pF @ 15 V
auf Bestellung 41561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
38+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.18 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMN3026LVT-7 Hersteller : DIODES INCORPORATED DMN3026LVT.pdf DMN3026LVT-7 SMD N channel transistors
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