DMN3028LQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V,SOT23,T&R,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.22 EUR |
| 30000+ | 0.21 EUR |
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Technische Details DMN3028LQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V,SOT23,T&R,, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN3028LQ-7 nach Preis ab 0.22 EUR bis 0.74 EUR
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DMN3028LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V,SOT23,T&R, Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 907338 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3028LQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V SOT23 T&R 3K |
auf Bestellung 8940 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3028LQ-7 | Hersteller : Diodes Inc |
MOSFET BVDSS: 25V30V SOT23 T&R 3K |
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DMN3028LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 10.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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DMN3028LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 40A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 10.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |