DMN3028LQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V,SOT23,T&R,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details DMN3028LQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V,SOT23,T&R,, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3028LQ-7 nach Preis ab 0.22 EUR bis 0.83 EUR
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DMN3028LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V,SOT23,T&R, Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 46659 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3028LQ-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN3028LQ-7 - Leistungs-MOSFET, n-Kanal, 30 V, 6.2 A, 0.016 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 860mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 5470 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3028LQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K |
auf Bestellung 8655 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3028LQ-7 | Hersteller : Diodes Inc |
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