DMN3032LFDBQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.25 EUR |
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Technische Details DMN3032LFDBQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3032LFDBQ-13 nach Preis ab 0.25 EUR bis 0.85 EUR
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DMN3032LFDBQ-13 | Hersteller : Diodes Incorporated |
MOSFETs Dual N-Ch Enh FET 30V 20Vgss 1.0W |
auf Bestellung 69795 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3032LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN3032LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 5A On-state resistance: 42mΩ |
Produkt ist nicht verfügbar |