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DMN3032LFDBQ-13

DMN3032LFDBQ-13 Diodes Incorporated

DMN3032LFDBQ.pdf
Hersteller: Diodes Incorporated
MOSFETs Dual N-Ch Enh FET 30V 20Vgss 1.0W
auf Bestellung 69531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.2 EUR
10+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
5000+0.27 EUR
Mindestbestellmenge: 3
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Technische Details DMN3032LFDBQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 6.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN3032LFDBQ-13 nach Preis ab 0.28 EUR bis 1.27 EUR

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DMN3032LFDBQ-13 DMN3032LFDBQ-13 Hersteller : Diodes Incorporated DMN3032LFDBQ.pdf Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
5000+0.28 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LFDBQ-13 DMN3032LFDBQ-13 Hersteller : Diodes Zetex 1031dmn3032lfdbq.pdf Trans MOSFET N-CH 30V 6.2A 6-Pin UDFN EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
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DMN3032LFDBQ-13 DMN3032LFDBQ-13 Hersteller : Diodes Incorporated DMN3032LFDBQ.pdf Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN3032LFDBQ-13 Hersteller : DIODES INCORPORATED DMN3032LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 25A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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