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DMN3032LFDBQ-7

DMN3032LFDBQ-7 Diodes Incorporated

DMN3032LFDBQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3032LFDBQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 6.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).

Weitere Produktangebote DMN3032LFDBQ-7 nach Preis ab 0.32 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN3032LFDBQ-7 DMN3032LFDBQ-7 Hersteller : Diodes Incorporated DMN3032LFDBQ.pdf MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W
auf Bestellung 54379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.94 EUR
10+0.81 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.37 EUR
3000+0.33 EUR
9000+0.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LFDBQ-7 DMN3032LFDBQ-7 Hersteller : Diodes Incorporated DMN3032LFDBQ.pdf Description: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 143650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
23+0.77 EUR
100+0.52 EUR
500+0.40 EUR
1000+0.36 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMN3032LFDBQ-7 Hersteller : DIODES INCORPORATED DMN3032LFDBQ.pdf DMN3032LFDBQ-7 SMD N channel transistors
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