DMN3032LQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 481 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 800mW, Rds On (Max) @ Id, Vgs: 31mOhm @ 5.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).