DMN3035LWN-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8
Part Status: Active
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Technische Details DMN3035LWN-13 Diodes Incorporated
Description: MOSFET 2N-CH 5.5A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3020-8, Part Status: Active.
Weitere Produktangebote DMN3035LWN-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN3035LWN-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V V-DFN3020-8 T&R 10K |
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