DMN3055LFDB-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.19 EUR |
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Technische Details DMN3055LFDB-13 Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
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| DMN3055LFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 25A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: reel; tape Kind of channel: enhanced |
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