Technische Details DMN3055LFDB-13 Diodes Inc
Description: MOSFET 2N-CH 5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN3055LFDB-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DMN3055LFDB-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 5A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
|
| DMN3055LFDB-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
||
| DMN3055LFDB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Polarisation: unipolar Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 4A Gate charge: 11.2nC On-state resistance: 75mΩ Power dissipation: 0.87W Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of channel: enhancement |
Produkt ist nicht verfügbar |