DMN3055LFDB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 2130000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
| 75000+ | 0.19 EUR |
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Technische Details DMN3055LFDB-7 Diodes Incorporated
Description: MOSFET 2N-CH 5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DMN3055LFDB-7 nach Preis ab 0.26 EUR bis 1.02 EUR
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DMN3055LFDB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 2132995 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3055LFDB-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3055LFDB-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMN3055LFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 25A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3055LFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 25A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |