auf Bestellung 8370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
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Technische Details DMN3060LCA3-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V, Power Dissipation (Max): 790mW, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X4-DSN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V.
Weitere Produktangebote DMN3060LCA3-7 nach Preis ab 0.17 EUR bis 0.65 EUR
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DMN3060LCA3-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 3.9A X4DSN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V |
auf Bestellung 5910 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3060LCA3-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 3.9A T/R |
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| DMN3060LCA3-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 1.35W Polarisation: unipolar Gate charge: 1.118nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Mounting: SMD Case: X4-DSN1006-3 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN3060LCA3-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V |
Produkt ist nicht verfügbar |
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| DMN3060LCA3-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.8A; Idm: 20A; 1.35W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 1.35W Polarisation: unipolar Gate charge: 1.118nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Mounting: SMD Case: X4-DSN1006-3 |
Produkt ist nicht verfügbar |