DMN3060LVT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 3.6A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-23-6
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.18 EUR |
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Technische Details DMN3060LVT-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.6A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: TSOT-23-6.
Weitere Produktangebote DMN3060LVT-13 nach Preis ab 0.15 EUR bis 0.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN3060LVT-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3060LVT-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K |
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