DMN3060LW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3060LW-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V.
Weitere Produktangebote DMN3060LW-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3060LW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
||
 |
DMN3060LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 640mW Polarisation: unipolar Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 18A Mounting: SMD Case: SOT323 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
|
 |
DMN3060LW-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SOT323 T&R 10K |
Produkt ist nicht verfügbar |
|
|
|
DMN3060LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 18A; 640mW; SOT323 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 640mW Polarisation: unipolar Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 18A Mounting: SMD Case: SOT323 |
Produkt ist nicht verfügbar |