Technische Details DMN3060LWQ-13 Diodes Inc
Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN3060LWQ-13 | Hersteller : DIODES INCORPORATED |
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DMN3060LWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN3060LWQ-13 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |