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DMN3061SWQ-13

DMN3061SWQ-13 Diodes Incorporated

DMN3061SWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
30000+0.11 EUR
50000+0.10 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3061SWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V.

Weitere Produktangebote DMN3061SWQ-13 nach Preis ab 0.09 EUR bis 0.77 EUR

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DMN3061SWQ-13 DMN3061SWQ-13 Hersteller : Diodes Incorporated DMN3061SWQ.pdf MOSFETs MOSFET BVDSS: 25V-30V SOT323 T&R 10K
auf Bestellung 20230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.43 EUR
10+0.29 EUR
100+0.15 EUR
1000+0.12 EUR
2500+0.11 EUR
10000+0.10 EUR
50000+0.09 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMN3061SWQ-13 DMN3061SWQ-13 Hersteller : Diodes Incorporated DMN3061SWQ.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
auf Bestellung 98950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.58 EUR
100+0.33 EUR
500+0.22 EUR
1000+0.17 EUR
2000+0.15 EUR
5000+0.13 EUR
Mindestbestellmenge: 23
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DMN3061SWQ-13 Hersteller : DIODES INCORPORATED DMN3061SWQ.pdf DMN3061SWQ-13 SMD N channel transistors
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