DMN3061SWQ-13 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.95 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.31 EUR |
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Technische Details DMN3061SWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 490mW (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3061SWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMN3061SWQ-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V SOT323 T&RInput Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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DMN3061SWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT323 T&R Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMN3061SWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Pulsed drain current: 22A Power dissipation: 0.65W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMN3061SWQ-13 | Diodes Zetex |
Trans MOSFET N-CH 30V 2.7A Automotive AEC-Q101 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN3061SWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN3061SWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN3061SWQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 22A; 650mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Pulsed drain current: 22A
Power dissipation: 0.65W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN3061SWQ-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 2.7A Automotive AEC-Q101 3-Pin SOT-323 T/R
Trans MOSFET N-CH 30V 2.7A Automotive AEC-Q101 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH