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DMN3061SWQ-13

DMN3061SWQ-13 Diodes Incorporated

DMN3061SWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.12 EUR
30000+ 0.11 EUR
50000+ 0.096 EUR
Mindestbestellmenge: 10000
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Technische Details DMN3061SWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V.

Weitere Produktangebote DMN3061SWQ-13 nach Preis ab 0.1 EUR bis 0.77 EUR

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Preis ohne MwSt
DMN3061SWQ-13 DMN3061SWQ-13 Hersteller : Diodes Incorporated DMN3061SWQ.pdf MOSFET MOSFET BVDSS: 25V-30V SOT323 T&R 10K
auf Bestellung 11424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.74 EUR
10+ 0.55 EUR
100+ 0.31 EUR
1000+ 0.16 EUR
2500+ 0.14 EUR
10000+ 0.11 EUR
20000+ 0.1 EUR
Mindestbestellmenge: 4
DMN3061SWQ-13 DMN3061SWQ-13 Hersteller : Diodes Incorporated DMN3061SWQ.pdf Description: MOSFET BVDSS: 25V~30V SOT323 T&R
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 278 pF @ 15 V
auf Bestellung 98950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
31+ 0.58 EUR
100+ 0.33 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 23
DMN3061SWQ-13 Hersteller : DIODES INCORPORATED DMN3061SWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN3061SWQ-13 Hersteller : DIODES INCORPORATED DMN3061SWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Mounting: SMD
Produkt ist nicht verfügbar