Technische Details DMN3066LQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 2.9A, On-state resistance: 98mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.33W, Polarisation: unipolar, Gate charge: 4.1nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 21A, Mounting: SMD, Case: SOT23, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3066LQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN3066LQ-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.9A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 1.33W Polarisation: unipolar Gate charge: 4.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 21A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN3066LQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R |
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DMN3066LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.9A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 1.33W Polarisation: unipolar Gate charge: 4.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 21A Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |