DMN3067LW-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 2.6A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 10 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
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Technische Details DMN3067LW-13 Diodes Incorporated
Description: MOSFET N-CH 30V 2.6A SOT-323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 10 V.
Weitere Produktangebote DMN3067LW-13 nach Preis ab 0.12 EUR bis 0.62 EUR
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DMN3067LW-13 | Hersteller : Diodes Incorporated |
MOSFETs 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC |
auf Bestellung 8985 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3067LW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 2.6A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 10 V |
auf Bestellung 45610 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3067LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 1.1W; SOT323 Kind of package: 13 inch reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 10A Mounting: SMD Case: SOT323 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN3067LW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; Idm: 10A; 1.1W; SOT323 Kind of package: 13 inch reel; tape Drain-source voltage: 30V Drain current: 2.1A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 10A Mounting: SMD Case: SOT323 |
Produkt ist nicht verfügbar |