auf Bestellung 19008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
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Technische Details DMN3070SSN-7 Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V, Power Dissipation (Max): 780mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V.
Weitere Produktangebote DMN3070SSN-7 nach Preis ab 0.21 EUR bis 0.63 EUR
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DMN3070SSN-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 4.2A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V |
auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3070SSN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 4.2A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3070SSN-7 | Hersteller : DIODES INCORPORATED |
DMN3070SSN-7 SMD N channel transistors |
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