auf Bestellung 2710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
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Technische Details DMN3071LFR4-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: X2-DFN1010-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V.
Weitere Produktangebote DMN3071LFR4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN3071LFR4-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 3.4A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V |
Produkt ist nicht verfügbar |
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| DMN3071LFR4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 15A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 1.1W Case: X2-DFN1010-3 Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 4.5nC On-state resistance: 75mΩ Pulsed drain current: 15A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |