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| 10+ | 0.5 EUR |
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Technische Details DMN3071LFR4-7 Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: X2-DFN1010-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V.
Weitere Produktangebote DMN3071LFR4-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMN3071LFR4-7 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 3.4A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN3071LFR4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V
Description: MOSFET N-CH 30V 3.4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH