Technische Details DMN30H14DLY-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89, Mounting: SMD, Drain current: 0.16A, Kind of channel: enhanced, Drain-source voltage: 300V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT89, On-state resistance: 20Ω, Pulsed drain current: 1A, Power dissipation: 2.2W, Gate charge: 4nC, Polarisation: unipolar, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMN30H14DLY-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN30H14DLY-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 Mounting: SMD Drain current: 0.16A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT89 On-state resistance: 20Ω Pulsed drain current: 1A Power dissipation: 2.2W Gate charge: 4nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN30H14DLY-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 300V 210MA SOT89 |
Produkt ist nicht verfügbar |
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DMN30H14DLY-13 | Hersteller : Diodes Incorporated |
MOSFET 300V N-Ch Enh Mode 20Vgss 96pF 4nC |
Produkt ist nicht verfügbar |
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| DMN30H14DLY-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 Mounting: SMD Drain current: 0.16A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT89 On-state resistance: 20Ω Pulsed drain current: 1A Power dissipation: 2.2W Gate charge: 4nC Polarisation: unipolar |
Produkt ist nicht verfügbar |