Produkte > DIODES INCORPORATED > DMN30H4D0L-13
DMN30H4D0L-13

DMN30H4D0L-13 Diodes Incorporated

DMN30H4D0L.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.27 EUR
20000+0.25 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN30H4D0L-13 Diodes Incorporated

Description: MOSFET N-CH 300V 250MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 310mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V.

Weitere Produktangebote DMN30H4D0L-13 nach Preis ab 0.27 EUR bis 1.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN30H4D0L-13 DMN30H4D0L-13 Hersteller : Diodes Incorporated DMN30H4D0L.pdf MOSFETs N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
auf Bestellung 8903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.97 EUR
10+0.66 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.30 EUR
5000+0.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-13 DMN30H4D0L-13 Hersteller : Diodes Incorporated DMN30H4D0L.pdf Description: MOSFET N-CH 300V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 184415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.40 EUR
1000+0.36 EUR
2000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMN30H4D0L-13 Hersteller : DIODES INCORPORATED DMN30H4D0L.pdf DMN30H4D0L-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH