DMN30H4D1S-7 Diodes Incorporated
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Technische Details DMN30H4D1S-7 Diodes Incorporated
Description: MOSFET N-CH 300V 430MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V.
Weitere Produktangebote DMN30H4D1S-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN30H4D1S-7 | Hersteller : DIODES INCORPORATED | DMN30H4D1S-7 SMD N channel transistors |
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DMN30H4D1S-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 300V 430MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V |
Produkt ist nicht verfügbar |