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DMN3110S-7

DMN3110S-7 Diodes Incorporated

DMN3110S.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
auf Bestellung 726000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
Mindestbestellmenge: 3000
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Technische Details DMN3110S-7 Diodes Incorporated

Description: MOSFET N-CH 30V 2.5A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V.

Weitere Produktangebote DMN3110S-7 nach Preis ab 0.3 EUR bis 1.28 EUR

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DMN3110S-7 DMN3110S-7 Hersteller : Diodes Incorporated DMN3110S.pdf MOSFETs MOSFET BVDSS: 25V-30 SOT23,3K
auf Bestellung 9643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.61 EUR
100+0.44 EUR
500+0.39 EUR
1000+0.32 EUR
3000+0.3 EUR
Mindestbestellmenge: 4
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DMN3110S-7 DMN3110S-7 Hersteller : Diodes Incorporated DMN3110S.pdf Description: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
auf Bestellung 726619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.8 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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DMN3110S-7 DMN3110S-7 Hersteller : Diodes Inc dmn3110s.pdf Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
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DMN3110S-7 DMN3110S-7 Hersteller : DIODES INCORPORATED DMN3110S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 25A; 1.8W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 0.11Ω
Power dissipation: 1.8W
Drain current: 3.1A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH