DMN3110S-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
auf Bestellung 444000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.43 EUR |
| 9000+ | 0.4 EUR |
| 30000+ | 0.39 EUR |
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Technische Details DMN3110S-7 Diodes Incorporated
Description: MOSFET N-CH 30V 2.5A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V.
Weitere Produktangebote DMN3110S-7 nach Preis ab 0.43 EUR bis 1.35 EUR
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DMN3110S-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 2.5A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V |
auf Bestellung 446229 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3110S-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30 SOT23,3K |
auf Bestellung 105718 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3110S-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN3110S-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 25A; 1.8W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Gate charge: 8.6nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 3.1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN3110S-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 25A; 1.8W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Gate charge: 8.6nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 3.1A |
Produkt ist nicht verfügbar |