DMN3135LVT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 3.5A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 69000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.32 EUR |
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Technische Details DMN3135LVT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.5A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMN3135LVT-7 nach Preis ab 0.32 EUR bis 1.09 EUR
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DMN3135LVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 3.5A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 71947 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3135LVT-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K |
auf Bestellung 49142 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3135LVT-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 3.5A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMN3135LVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 0.84W Polarisation: unipolar Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 2.7A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN3135LVT-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 3.5A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMN3135LVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 25A; 0.84W; TSOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 0.84W Polarisation: unipolar Case: TSOT26 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Drain current: 2.7A |
Produkt ist nicht verfügbar |