DMN3150L-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 15A
Drain-source voltage: 30V
Drain current: 3.1A
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
380+ | 0.19 EUR |
525+ | 0.14 EUR |
590+ | 0.12 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
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Technische Details DMN3150L-7 DIODES INCORPORATED
Description: MOSFET N-CH 28V 3.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 28 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V.
Weitere Produktangebote DMN3150L-7 nach Preis ab 0.099 EUR bis 1.04 EUR
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DMN3150L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Drain current: 3.1A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1840 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 28V 3.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 28 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V |
auf Bestellung 1005000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 28V 3.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 28 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V |
auf Bestellung 1008599 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Incorporated | MOSFET N-Channel |
auf Bestellung 54496 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3150L-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 30V 3.8A 85mΩ 1.4W DMN3150L-7 Diodes TDMN3150l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 28V 3.8A 3-Pin SOT-23 T/R |
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