DMN3150LW-7 Diodes Incorporated


ds31514.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 28V 1.6A SOT323
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
Drain to Source Voltage (Vdss): 28 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
auf Bestellung 2187000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3150LW-7 Diodes Incorporated

Description: MOSFET N-CH 28V 1.6A SOT323, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 88mOhm @ 1.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V, Drain to Source Voltage (Vdss): 28 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.

Weitere Produktangebote DMN3150LW-7 nach Preis ab 0.19 EUR bis 0.76 EUR

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DMN3150LW-7 DMN3150LW-7 Diodes Incorporated ds31514.pdf MOSFETs 0.35W 28V 1.6A
auf Bestellung 20223 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.75 EUR
10+0.56 EUR
100+0.29 EUR
1000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3150LW-7 DMN3150LW-7 Diodes Incorporated ds31514.pdf Description: MOSFET N-CH 28V 1.6A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
Drain to Source Voltage (Vdss): 28 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 2189328 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
36+0.5 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3150LW-7 ds31514.pdf
Hersteller: Diodes Incorporated
MOSFETs 0.35W 28V 1.6A
auf Bestellung 20223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.75 EUR
10+0.56 EUR
100+0.29 EUR
1000+0.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3150LW-7 ds31514.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 28V 1.6A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
Drain to Source Voltage (Vdss): 28 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 2189328 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
36+0.5 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH