auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.075 EUR |
| 20000+ | 0.071 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3190LDW-13 Diodes Zetex
Description: MOSFET 2N-CH 30V 1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A, Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote DMN3190LDW-13 nach Preis ab 0.057 EUR bis 1.09 EUR
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DMN3190LDW-13 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss |
auf Bestellung 19161 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 405551 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN3190LDW-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3190LDW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 400mW; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 335mΩ Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Gate charge: 2nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9.6A Drain-source voltage: 30V Drain current: 1A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN3190LDW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1A; Idm: 9.6A; 400mW; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 335mΩ Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Gate charge: 2nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9.6A Drain-source voltage: 30V Drain current: 1A |
Produkt ist nicht verfügbar |