DMN3190LDW-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
| 30000+ | 0.099 EUR |
| 50000+ | 0.093 EUR |
| 70000+ | 0.09 EUR |
| 100000+ | 0.088 EUR |
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Technische Details DMN3190LDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 2.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 320mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3190LDW-13 nach Preis ab 0.092 EUR bis 0.62 EUR
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DMN3190LDW-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss |
auf Bestellung 36277 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3190LDW-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Current - Continuous Drain (Id) @ 25°C: 1A Drain to Source Voltage (Vdss): 30V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 311796 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN3190LDW-13 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
auf Bestellung 36277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| 20000+ | 0.1 EUR |
| 50000+ | 0.092 EUR |
| DMN3190LDW-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 1A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 311796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.14 EUR |
| 5000+ | 0.12 EUR |