Produkte > DIODES INC > DMN3190LDWQ-13

DMN3190LDWQ-13 Diodes Inc


dmn3190ldwq.pdf Hersteller: Diodes Inc
Dual N Channel Enhancement Mode Mosfet
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DMN3190LDWQ-13 Diodes Inc

Description: MOSFET 2N-CH 30V 1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN3190LDWQ-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN3190LDWQ-13 DMN3190LDWQ-13 Hersteller : Diodes Incorporated DMN3190LDWQ.pdf Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN3190LDWQ-13 Hersteller : Diodes Incorporated DMN3190LDWQ.pdf MOSFET MOSFET BVDSS: 25V-30V SOT363 T&R 10K
Produkt ist nicht verfügbar