DMN3190LDWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.17 EUR |
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Technische Details DMN3190LDWQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V, Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3190LDWQ-7 nach Preis ab 0.17 EUR bis 1.55 EUR
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| DMN3190LDWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SOT363 T&R 3K |
auf Bestellung 2970 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN3190LDWQ-7 | Hersteller : Diodes Inc |
Dual N Channel Enhancement Mode Mosfet |
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DMN3190LDWQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 335mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Gate charge: 2nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2A Drain-source voltage: 30V Drain current: 1A Anzahl je Verpackung: 5 Stücke |
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DMN3190LDWQ-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 335mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.25W Polarisation: unipolar Gate charge: 2nC Case: SOT363 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 2A Drain-source voltage: 30V Drain current: 1A |
Produkt ist nicht verfügbar |