Produkte > DIODES INCORPORATED > DMN31D4UFZ-7B
DMN31D4UFZ-7B

DMN31D4UFZ-7B Diodes Incorporated

DMN31D4UFZ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 730000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.05 EUR
30000+0.04 EUR
50000+0.04 EUR
70000+0.04 EUR
250000+0.04 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN31D4UFZ-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X2-DFN0606, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0606-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V.

Weitere Produktangebote DMN31D4UFZ-7B nach Preis ab 0.04 EUR bis 0.30 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN31D4UFZ-7B DMN31D4UFZ-7B Hersteller : Diodes Incorporated DMN31D4UFZ.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN0606
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0606-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
auf Bestellung 736225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
91+0.19 EUR
218+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D4UFZ-7B Hersteller : Diodes Incorporated DMN31D4UFZ-3103840.pdf MOSFETs MOSFET BVDSS: 25V-30V X2-DFN0606-3 T&R 10K
auf Bestellung 9879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+0.21 EUR
19+0.15 EUR
100+0.08 EUR
1000+0.06 EUR
2500+0.06 EUR
10000+0.05 EUR
20000+0.04 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH