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DMN31D5L-13

DMN31D5L-13 Diodes Incorporated

DMN31D5L.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
30000+0.08 EUR
50000+0.07 EUR
100000+0.06 EUR
250000+0.06 EUR
Mindestbestellmenge: 10000
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Technische Details DMN31D5L-13 Diodes Incorporated

Description: MOSFET N-CH 30V 500MA SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V.

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DMN31D5L-13 DMN31D5L-13 Hersteller : Diodes Incorporated DIOD_S_A0006645120_1-2542905.pdf MOSFET MOSFET BVDSS: 25V-30V
auf Bestellung 59850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.61 EUR
10+0.42 EUR
100+0.26 EUR
1000+0.12 EUR
2500+0.10 EUR
10000+0.08 EUR
50000+0.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMN31D5L-13 DMN31D5L-13 Hersteller : Diodes Incorporated DMN31D5L.pdf Description: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 420000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.42 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
Mindestbestellmenge: 29
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DMN31D5L-13 DMN31D5L-13 Hersteller : Diodes Inc dmn31d5l.pdf Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
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