DMN31D5UDJ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
auf Bestellung 370000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.16 EUR |
| 50000+ | 0.13 EUR |
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Technische Details DMN31D5UDJ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.22A SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-963.
Weitere Produktangebote DMN31D5UDJ-7 nach Preis ab 0.13 EUR bis 1.09 EUR
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DMN31D5UDJ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.22A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
auf Bestellung 376679 Stücke: Lieferzeit 21-28 Tag (e) |
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| DMN31D5UDJ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 21870 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN31D5UDJ-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.22A 6-Pin SOT-963 T/R |
Produkt ist nicht verfügbar |
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| DMN31D5UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963 Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 0.38nC Case: SOT963 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.6A Drain-source voltage: 30V Drain current: 0.16A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN31D5UDJ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 160mA; Idm: 0.6A; 350mW; SOT963 Mounting: SMD Kind of package: reel; tape On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 0.38nC Case: SOT963 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.6A Drain-source voltage: 30V Drain current: 0.16A |
Produkt ist nicht verfügbar |