DMN31D6UT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 950000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.07 EUR |
| 20000+ | 0.06 EUR |
| 30000+ | 0.06 EUR |
| 50000+ | 0.06 EUR |
| 70000+ | 0.05 EUR |
| 100000+ | 0.05 EUR |
| 250000+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN31D6UT-13 Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 320mW, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V.
Weitere Produktangebote DMN31D6UT-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DMN31D6UT-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.35A 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
|
 |
DMN31D6UT-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFETBVDSS: 25V-30V |
Produkt ist nicht verfügbar |