DMN31D6UT-13 Diodes Incorporated

Description: MOSFET N-CH 30V 350MA SOT523, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Power Dissipation (Max): 320mW, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).