DMN32D0LFB4-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V-30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
| 50000+ | 0.10 EUR |
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Technische Details DMN32D0LFB4-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V X2-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V.
Weitere Produktangebote DMN32D0LFB4-7B nach Preis ab 0.09 EUR bis 0.65 EUR
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DMN32D0LFB4-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K |
auf Bestellung 19100 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D0LFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V X2-DFN1006 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 44.8 pF @ 15 V |
auf Bestellung 209900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN32D0LFB4-7B | Hersteller : Diodes Zetex |
N-Channel Enhancement Mode MOSFET |
auf Bestellung 200000 Stücke: Lieferzeit 14-21 Tag (e) |
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