Produkte > DIODES INCORPORATED > DMN32D0LVQ-7
DMN32D0LVQ-7

DMN32D0LVQ-7 Diodes Incorporated

DMN32D0LVQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.095 EUR
21000+0.092 EUR
30000+0.088 EUR
75000+0.086 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN32D0LVQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.68A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 480mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN32D0LVQ-7 nach Preis ab 0.14 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN32D0LVQ-7 DMN32D0LVQ-7 Hersteller : Diodes Incorporated DMN32D0LVQ.pdf Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 116205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
61+0.29 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LVQ-7 DMN32D0LVQ-7 Hersteller : Diodes Zetex dmn32d0lvq.pdf Dual N-Channel Enhancement Mode Field Effect Transistor Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN32D0LVQ-7 Hersteller : Diodes Incorporated DMN32D0LVQ-3045350.pdf MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH