auf Bestellung 348000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.18 EUR |
9000+ | 0.17 EUR |
24000+ | 0.16 EUR |
45000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN32D2LFB4-7 Diodes Zetex
Description: MOSFET N-CH 30V 300MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V.
Weitere Produktangebote DMN32D2LFB4-7 nach Preis ab 0.13 EUR bis 0.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN32D2LFB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
auf Bestellung 3216000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 300MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X2-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V |
auf Bestellung 3387000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 300MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X2-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V |
auf Bestellung 3389892 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Incorporated | MOSFET 350mW 30Vdss |
auf Bestellung 66024 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN32D2LFB4-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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DMN32D2LFB4-7 | Hersteller : Diodes Inc | Trans MOSFET N-CH 30V 0.3A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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DMN32D2LFB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN32D2LFB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; 350mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Power dissipation: 0.35W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |