DMN32D2LFB4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 300MA 3DFN
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
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Technische Details DMN32D2LFB4-7 Diodes Incorporated
Description: MOSFET N-CH 30V 300MA 3DFN, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Active, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote DMN32D2LFB4-7 nach Preis ab 0.2 EUR bis 1.04 EUR
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DMN32D2LFB4-7 | Diodes Incorporated |
MOSFETs 350mW 30Vdss |
auf Bestellung 38444 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LFB4-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 300MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Active Supplier Device Package: X2-DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 135100 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN32D2LFB4-7 |
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Hersteller: Diodes Incorporated
MOSFETs 350mW 30Vdss
MOSFETs 350mW 30Vdss
auf Bestellung 38444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.2 EUR |
| DMN32D2LFB4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 300MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 300MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 135100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |