DMN33D8LDW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.093 EUR |
| 9000+ | 0.089 EUR |
| 15000+ | 0.083 EUR |
| 21000+ | 0.08 EUR |
| 30000+ | 0.077 EUR |
| 75000+ | 0.073 EUR |
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Technische Details DMN33D8LDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 250mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 350mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN33D8LDW-7 nach Preis ab 0.083 EUR bis 0.61 EUR
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DMN33D8LDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.25A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 30V Power - Max: 350mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 439045 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN33D8LDW-7 | Diodes Incorporated |
MOSFETs 33V Dual N-Ch Enh 30Vgss 250mA 0.35W |
auf Bestellung 5789 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN33D8LDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.25A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 439045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| DMN33D8LDW-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
MOSFETs 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
auf Bestellung 5789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.097 EUR |
| 9000+ | 0.084 EUR |
| 45000+ | 0.083 EUR |