DMN33D8LV-7

DMN33D8LV-7 Diodes Incorporated


DMN33D8LV.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-563
auf Bestellung 1077000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
9000+0.11 EUR
75000+0.09 EUR
150000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN33D8LV-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.35A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 430mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-563.

Weitere Produktangebote DMN33D8LV-7 nach Preis ab 0.10 EUR bis 0.74 EUR

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DMN33D8LV-7 DMN33D8LV-7 Hersteller : Diodes Incorporated DIODS21575_1-2541793.pdf MOSFETs 2N7002 Family
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.44 EUR
10+0.29 EUR
100+0.15 EUR
1000+0.14 EUR
3000+0.10 EUR
9000+0.10 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMN33D8LV-7 DMN33D8LV-7 Hersteller : Diodes Incorporated DMN33D8LV.pdf Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 430mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-563
auf Bestellung 1077000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH