Technische Details DMN33D9LV-13A Diodes Zetex
Description: MOSFET 2N-CH 30V 0.35A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 430mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 100µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMN33D9LV-13A
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DMN33D9LV-13A | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 0.35A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 430mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 100µA Supplier Device Package: SOT-563 |
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DMN33D9LV-13A | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V 30V SOT563 T&R 10K |
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| DMN33D9LV-13A | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 200mA; Idm: 0.8A; 200mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 7Ω Mounting: SMD Gate charge: 1.23nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
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