Produkte > DIODES INCORPORATED > DMN3401LDW-13
DMN3401LDW-13

DMN3401LDW-13 Diodes Incorporated


DMN3401LDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 60000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN3401LDW-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.8A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 290mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote DMN3401LDW-13 nach Preis ab 0.12 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN3401LDW-13 DMN3401LDW-13 Hersteller : Diodes Incorporated DMN3401LDW.pdf Description: MOSFET 2N-CH 30V 0.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 69860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.20 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DMN3401LDW-13 Hersteller : DIODES INCORPORATED DMN3401LDW.pdf DMN3401LDW-13 Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3401LDW-13 DMN3401LDW-13 Hersteller : Diodes Incorporated DIOD_S_A0012493056_1-2543834.pdf MOSFET MOSFET BVDSS: 25V-30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH