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DMN3401LDW-7 Diodes Incorporated


DMN3401LDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3401LDW-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.8A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 290mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMN3401LDW-7 nach Preis ab 0.12 EUR bis 0.65 EUR

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DMN3401LDW-7 DMN3401LDW-7 Diodes Incorporated DMN3401LDW.pdf MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 5393 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.65 EUR
10+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3401LDW-7 DMN3401LDW-7 Diodes Incorporated DMN3401LDW.pdf Description: MOSFET 2N-CH 30V 0.8A SOT363
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
auf Bestellung 7520 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.65 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3401LDW-7 DMN3401LDW.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 5393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.65 EUR
10+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3401LDW-7 DMN3401LDW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT363
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
auf Bestellung 7520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH