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DMN3730UFB4-7

DMN3730UFB4-7 Diodes Incorporated

DMN3730UFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 750MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
auf Bestellung 2139000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.23 EUR
9000+0.22 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3730UFB4-7 Diodes Incorporated

Description: MOSFET N-CH 30V 750MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V.

Weitere Produktangebote DMN3730UFB4-7 nach Preis ab 0.29 EUR bis 0.88 EUR

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DMN3730UFB4-7 DMN3730UFB4-7 Hersteller : Diodes Incorporated DMN3730UFB4.pdf MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
auf Bestellung 3174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.58 EUR
100+0.40 EUR
500+0.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3730UFB4-7 DMN3730UFB4-7 Hersteller : Diodes Incorporated DMN3730UFB4.pdf Description: MOSFET N-CH 30V 750MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
auf Bestellung 2140288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
30+0.59 EUR
100+0.40 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DMN3730UFB4-7 DMN3730UFB4-7 Hersteller : Diodes Inc 39838522059453864dmn3730ufb4.pdf Trans MOSFET N-CH 30V 0.75A 3-Pin X2-DFN T/R
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DMN3730UFB4-7 Hersteller : DIODES INCORPORATED DMN3730UFB4.pdf DMN3730UFB4-7 SMD N channel transistors
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