DMN3731U-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 900MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
auf Bestellung 194256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.07 EUR |
| 6000+ | 0.065 EUR |
| 9000+ | 0.054 EUR |
| 30000+ | 0.053 EUR |
| 75000+ | 0.048 EUR |
| 150000+ | 0.041 EUR |
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Technische Details DMN3731U-7 Diodes Incorporated
Description: MOSFET N-CH 30V 900MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 400mW, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V.
Weitere Produktangebote DMN3731U-7 nach Preis ab 0.037 EUR bis 0.42 EUR
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DMN3731U-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 66424 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3731U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 900MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 196794 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3731U-7 | Hersteller : Diodes Zetex |
High Enhancement Mode MOSFET |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3731U-7 | Hersteller : Diodes Zetex |
High Enhancement Mode MOSFET |
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| DMN3731U-7 | Hersteller : Diodes Inc |
High Enhancement Mode MOSFET |
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DMN3731U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke |
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DMN3731U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.58W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.73Ω Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |