auf Bestellung 660000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.044 EUR |
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Technische Details DMN3731UFB4-7B Diodes Zetex
Description: MOSFET N-CH 30V 1.2A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V.
Weitere Produktangebote DMN3731UFB4-7B nach Preis ab 0.049 EUR bis 0.49 EUR
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DMN3731UFB4-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 1.2A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 660000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3731UFB4-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 9207 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3731UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 1.2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 520mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
auf Bestellung 668190 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3731UFB4-7B | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1.2A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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| DMN3731UFB4-7B | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 1.2A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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| DMN3731UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Pulsed drain current: 3A Drain-source voltage: 30V Drain current: 0.9A On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 970mW Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN3731UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Pulsed drain current: 3A Drain-source voltage: 30V Drain current: 0.9A On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 970mW Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |