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DMN3732UFB4Q-7B

DMN3732UFB4Q-7B Diodes Incorporated

DMN3732UFB4Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
30000+0.07 EUR
50000+0.07 EUR
100000+0.06 EUR
Mindestbestellmenge: 10000
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Technische Details DMN3732UFB4Q-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X2-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMN3732UFB4Q-7B nach Preis ab 0.07 EUR bis 0.56 EUR

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DMN3732UFB4Q-7B DMN3732UFB4Q-7B Hersteller : Diodes Incorporated DMN3732UFB4Q.pdf Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 147252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.09 EUR
Mindestbestellmenge: 32
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DMN3732UFB4Q-7B Hersteller : Diodes Incorporated DMN3732UFB4Q-3103829.pdf MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.38 EUR
100+0.24 EUR
1000+0.11 EUR
2500+0.10 EUR
10000+0.07 EUR
20000+0.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH