DMN3732UFB4Q-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.087 EUR |
| 30000+ | 0.086 EUR |
| 50000+ | 0.077 EUR |
| 100000+ | 0.068 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
10000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3732UFB4Q-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN3732UFB4Q-7B nach Preis ab 0.1 EUR bis 0.67 EUR
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DMN3732UFB4Q-7B | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K |
auf Bestellung 25520 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3732UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 147252 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3732UFB4Q-7B |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
MOSFETs MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
auf Bestellung 25520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.56 EUR |
| 13+ | 0.25 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| DMN3732UFB4Q-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 147252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.1 EUR |