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DMN4010LFG-7

DMN4010LFG-7 Diodes Incorporated

DMN4010LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.33 EUR
4000+0.30 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN4010LFG-7 Diodes Incorporated

Description: MOSFET N-CH 40V 11.5A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V, Power Dissipation (Max): 930mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V.

Weitere Produktangebote DMN4010LFG-7 nach Preis ab 0.35 EUR bis 1.03 EUR

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DMN4010LFG-7 DMN4010LFG-7 Hersteller : Diodes Incorporated DMN4010LFG.pdf Description: MOSFET N-CH 40V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V
auf Bestellung 49050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.87 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DMN4010LFG-7 DMN4010LFG-7 Hersteller : Diodes Incorporated DMN4010LFG.pdf MOSFETs 40 N-Ch Enh FET 31V to 99V 1810pF
auf Bestellung 11606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.03 EUR
10+0.90 EUR
100+0.62 EUR
500+0.49 EUR
1000+0.40 EUR
2000+0.35 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN4010LFG-7 Hersteller : DIODES INCORPORATED DMN4010LFG.pdf DMN4010LFG-7 SMD N channel transistors
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