DMN4010LFG-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.5A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.33 EUR |
| 4000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN4010LFG-7 Diodes Incorporated
Description: MOSFET N-CH 40V 11.5A PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 930mW (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN4010LFG-7 nach Preis ab 0.35 EUR bis 1.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN4010LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 11.5A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V Power Dissipation (Max): 930mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V |
auf Bestellung 49050 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
DMN4010LFG-7 | Diodes Incorporated |
MOSFETs 40 N-Ch Enh FET 31V to 99V 1810pF |
auf Bestellung 11606 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN4010LFG-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V
Description: MOSFET N-CH 40V 11.5A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 20 V
auf Bestellung 49050 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.38 EUR |
| DMN4010LFG-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs 40 N-Ch Enh FET 31V to 99V 1810pF
MOSFETs 40 N-Ch Enh FET 31V to 99V 1810pF
auf Bestellung 11606 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.35 EUR |


