Technische Details DMN4020LFDE-13 Diodes Inc
Description: MOSFET N-CH 40V 8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 20 V.
Weitere Produktangebote DMN4020LFDE-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN4020LFDE-13 | Hersteller : DIODES INCORPORATED |
 DMN4020LFDE-13 SMD N channel transistors |
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DMN4020LFDE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 20 V |
Produkt ist nicht verfügbar |
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DMN4020LFDE-13 | Hersteller : Diodes Incorporated |
MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF |
Produkt ist nicht verfügbar |