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DMN4020LFDE-13 Diodes Inc


dmn4020lfde.pdf Hersteller: Diodes Inc
MOSFET N CH 40V U-DFN2020-6
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Technische Details DMN4020LFDE-13 Diodes Inc

Description: MOSFET N-CH 40V 8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 20 V.

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DMN4020LFDE-13 Hersteller : DIODES INCORPORATED DMN4020LFDE.pdf DMN4020LFDE-13 SMD N channel transistors
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DMN4020LFDE-13 DMN4020LFDE-13 Hersteller : Diodes Incorporated DMN4020LFDE.pdf Description: MOSFET N-CH 40V 8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 20 V
Produkt ist nicht verfügbar
DMN4020LFDE-13 DMN4020LFDE-13 Hersteller : Diodes Incorporated DMN4020LFDE.pdf MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF
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