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DMN4026SK3-13

DMN4026SK3-13 Diodes Incorporated

DMN4026SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
5000+0.33 EUR
7500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN4026SK3-13 Diodes Incorporated

Description: MOSFET N-CH 40V 28A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V.

Weitere Produktangebote DMN4026SK3-13 nach Preis ab 0.33 EUR bis 1.21 EUR

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DMN4026SK3-13 DMN4026SK3-13 Hersteller : Diodes Incorporated DMN4026SK3.pdf MOSFETs 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
auf Bestellung 11587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.82 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.4 EUR
2500+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN4026SK3-13 DMN4026SK3-13 Hersteller : Diodes Incorporated DMN4026SK3.pdf Description: MOSFET N-CH 40V 28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
auf Bestellung 76141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
22+0.81 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 15
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DMN4026SK3-13 DMN4026SK3-13 Hersteller : Diodes Inc 45132753660863104dmn4026sk3.pdf Trans MOSFET N-CH 40V 28A 3-Pin(2+Tab) DPAK T/R
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DMN4026SK3-13 Hersteller : DIODES INCORPORATED DMN4026SK3.pdf DMN4026SK3-13 SMD N channel transistors
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