DMN4026SK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
| 12500+ | 0.32 EUR |
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Technische Details DMN4026SK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V.
Weitere Produktangebote DMN4026SK3-13 nach Preis ab 0.36 EUR bis 0.97 EUR
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DMN4026SK3-13 | Hersteller : Diodes Incorporated |
MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF |
auf Bestellung 4894 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 28A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V |
auf Bestellung 41180 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 40V 28A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMN4026SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 21.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN4026SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 70A; 2.1W; TO252 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 18A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 21.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: TO252 |
Produkt ist nicht verfügbar |