DMN4026SK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.33 EUR |
| 7500+ | 0.32 EUR |
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Technische Details DMN4026SK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN4026SK3-13 nach Preis ab 0.33 EUR bis 1.21 EUR
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DMN4026SK3-13 | Hersteller : Diodes Incorporated |
MOSFETs 40V N-Ch Enh FET 20Vgss 1.6W 1181pF |
auf Bestellung 11587 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 28A TO252 Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V |
auf Bestellung 76141 Stücke: Lieferzeit 10-14 Tag (e) |
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