DMN4026SSDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 7A 8SO
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Active
Supplier Device Package: 8-SO
| Anzahl | Preis |
|---|---|
| 2500+ | 0.65 EUR |
| 5000+ | 0.62 EUR |
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Technische Details DMN4026SSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 7A 8SO, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Part Status: Active, Supplier Device Package: 8-SO.
Weitere Produktangebote DMN4026SSDQ-13 nach Preis ab 0.61 EUR bis 1.53 EUR
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DMN4026SSDQ-13 | Hersteller : DIODES/ZETEX |
2N-MOSFET 40V 7A 24mΩ 1.3W DMN4026SSDQ-13 Diodes TDMN4026ssdq Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN4026SSDQ-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss |
auf Bestellung 3941 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 7A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 12424 Stücke: Lieferzeit 10-14 Tag (e) |
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